Update on Overleaf.

drampower-main.tex

@@ -514,7 +514,7 @@ Thus, the equations need to be adapted accordingly, i.e., for GDDR, $I_{DD3N}$ m
 %
 \subsection{Refresh Power}\label{subsec:refresh}
 %
-Depending on the DRAM standard, various refresh modes are supported.
+Depending on the DRAM standard, various refresh modes are offered.
 They differ in the number of banks that are refreshed with a single command.
 All-bank refresh commands target all banks of the device at once. 
 As no data can be accessed in banks where a refresh is in progress, this mode can cause a large drop in bandwidth.
@@ -524,7 +524,7 @@ Thus, when a burst refresh current is provided, the energy for a single refresh
 \begin{equation}
     E_{REF} = V_{DD} \cdot \left(I_{DD5B} - I_{\circled{N}}\right) \cdot t_{RFC}
 \end{equation}
-
+wher
 
 
 During refresh, the targeted banks are considered active because 
@@ -756,7 +756,7 @@ As an example, Figure~\ref{fig:terminations} shows the two equivalent circuit di
                 to [R,a=$R_{TT}$] ++(0,1.5) node[tground](VDDQ2){};
         \node[anchor=south] at (VDDQ1) {$V_{DDQ}$};
         \node[anchor=south] at (VDDQ2) {$V_{DDQ}$};
-        \draw(x2) to [open] ++(1.5,0) coordinate(x3) 
+        \draw(x2) to [open] ++(1.75,0) coordinate(x3) 
             to [R=$R_{ON}$] ++(0,-1.0) node[ground](x4){};
         \draw(x3)
             to [short=$"0"$, name={s2}] ++(2,0)