50 lines
1.3 KiB
Plaintext
50 lines
1.3 KiB
Plaintext
material SILICON :
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thermal conductivity 1.30e-4 ;
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volumetric heat capacity 1.628e-12 ;
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material BEOL :
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thermal conductivity 2.25e-6 ;
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volumetric heat capacity 2.175e-12 ;
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material COPPER :
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thermal conductivity 4.01e-04 ;
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volumetric heat capacity 3.37e-12 ;
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top heat sink :
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//sink height 1e03, area 100e06, material COPPER ;
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//spreader height 0.5e03, area 70e06, material SILICON ;
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heat transfer coefficient 1.3e-09 ;
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temperature 318.15 ;
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dimensions :
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chip length 6100, width 10600 ;
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cell length 100, width 100 ;
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layer PCB :
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height 10 ;
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material BEOL ;
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die DRAM :
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layer 58.5 SILICON ;
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source 2 SILICON ;
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layer 1.5 BEOL ;
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layer 58.5 SILICON ;
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stack:
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die DRAM_DIE DRAM floorplan "./mem.flp" ;
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layer CONN_TO_PCB PCB ;
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solver:
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transient step 0.01, slot 0.05 ;
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initial temperature 300.0 ;
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output:
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Tflpel(DRAM_DIE.channel0 , "temp_flp_element_ch0.txt" , average , slot );
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Tflpel(DRAM_DIE.channel1 , "temp_flp_element_ch1.txt" , average , slot );
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Tflpel(DRAM_DIE.channel2 , "temp_flp_element_ch2.txt" , average , slot );
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Tflpel(DRAM_DIE.channel3 , "temp_flp_element_ch3.txt" , average , slot );
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Tmap (DRAM_DIE, "output1.txt", slot) ;
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Pmap (DRAM_DIE, "output2.txt", slot) ;
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